* Question
| Briefly describe the FPGA technology of RRAM? |
* Answer
| For the shortcomings of the SRAM architecture based on the traditional FPGA, if the SRAM is changed to non-volatile SRAM, it can have the advantages of SRAM continuous high-speed data writing, and ensure that data is not lost after power-off, and data security is ensured.However, due to the characteristics of the ferroelectric material itself, the manufacturing process is complicated and difficult to be compatible with the conventional CMOS process, resulting in the cost of the ferroelectric FPGA being too high, and not suitable for mass production and large-capacity storage.The biggest feature of SRAM is its fast speed (on the order of 10 ns), but it also has its own inherent shortcomings.It takes 6 transistors to form a basic unit.Its cell area is the largest of all memories.Generally, RRAM memory cells can be divided into two types: 1T1R structure and cross array structure.The former only needs one transistor for strobe. Compared with the six transistors of SRAM, the area of the memory cell is greatly reduced, and the density can be increased by more than three times. |
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