* Question
| What is the optimization method for gate voltage scanning? |
* Answer
| This method is mainly applicable to a 1T1R (one transistor one Resistors) structure RRAM device.The conventional 1T1R operates as shown in (a). By applying a fixed bias to the gate to turn on the transistor connected to the RRAM, the device cell to be operated is selected and current limited during operation.According to the transistor transfer characteristics, the channel width formed in the transistor becomes larger as the gate terminal bias voltage increases, and the current flowing through the channel and the memory cell connected in series also increases.When the current flowing through the RRAM reaches a threshold, the RRAM transitions from a high impedance state to a low resistance state. |
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