Overview
MT29F2G16ABAEAWP-AIT:E is a high-performance NAND Flash memory chip launched by Micron, which adopts advanced 3D NAND technology. The chip provides 2GB of large-capacity storage, and has extremely high read and write speeds and durability, suitable for various storage-intensive application scenarios. It is particularly suitable for consumer electronics, industrial automation, automotive electronics and other fields that have high requirements for storage speed and capacity, providing efficient and stable storage solutions.
Technical specifications
parameter | Specification |
Storage Type | NAND Flash |
capacity | 2GB |
Package Type | TSOP-48 |
Operating voltage | 2.7V – 3.6V |
Read and write speed | High-speed reading and writing, supporting up to 400MB/s |
Durability | 3000 erase and write cycles |
Operating temperature range | -40°C to +85°C |
Interface Type | Universal Flash interface, compatible with multiple controllers |
Error Correction | Built-in ECC (Error Correction Code) |
MT29F2G16ABAEAWP-AIT:E Outstanding features
● High-performance read and write capabilities
Supporting read and write speeds up to 400MB/s, it can quickly respond to the system’s needs for data access and is suitable for applications that require high-speed data exchange.
● Extremely high storage capacity
It provides 2GB of large-capacity storage, which can meet the needs of high-density storage applications and is especially suitable for devices that require large data storage.
● Strong durability
It supports up to 3000 erase and write cycles, which is suitable for high-frequency read and write application scenarios, ensuring long-term stable operation.
● Wide operating temperature range
It can operate stably in the operating temperature range of -40°C to +85°C, adapting to the use requirements in various harsh environments.
● 3D NAND Technology
The use of advanced 3D NAND technology improves storage density and performance, while effectively reducing power consumption and increasing product reliability.
Application Areas
The excellent performance of MT29F2G16ABAEAWP-AIT:E makes it widely used in many fields:
● Consumer electronics: Provide high-performance storage support in smartphones, tablets, smart wearable devices and other products to ensure fast response of devices.
● Automotive electronics: used in vehicle navigation systems, entertainment systems, ADAS (Advanced Driver Assistance Systems), etc. to meet high demands for data storage and reading.
● Industrial Automation: Provides stable and fast storage solutions in demanding applications such as industrial control systems and sensor networks.
● Network communication equipment: used in network devices such as routers and switches to support large-scale data transmission and fast storage requirements.
Comparative analysis: MT29F2G16ABAEAWP-AIT:E and other memory chips
Features/Specifications | MT29F2G16ABAEAWP-AIT:E | Common NAND Flash storage chips |
Read and write speed | Up to 400MB/s | 150MB/s – 250MB/s |
Durability | 3000 erase and write cycles | 1000 erase and write cycles |
Storage capacity | 2GB | 1GB – 2GB |
Operating temperature range | -40°C to +85°C | -20°C to +70°C |
3D NAND Technology | support | Not necessarily supported |
Compared with traditional NAND Flash memory chips, MT29F2G16ABAEAWP-AIT:E provides higher read and write speeds, longer erase and write cycles, and a wider operating temperature range, making it particularly suitable for high-frequency data storage and harsh working environments.
Micron: A global leader in storage solutions
Micron is one of the world’s leading semiconductor storage solution providers, dedicated to providing high-quality memory, storage and data management technologies to global customers. Micron’s storage products are widely used in consumer electronics, data centers, automotive electronics and other fields. Its innovative storage technology has promoted the development of many industries, especially in 3D NAND technology, where Micron has always been in the leading position in the industry.
Why choose MT29F2G16ABAEAWP-AIT:E?
The reasons for choosing MT29F2G16ABAEAWP-AIT:E memory chip include:
● High read and write performance: Provides ultra-fast data transfer rates to meet high-performance storage needs.
● High erase/write endurance: Supports up to 3,000 erase/write cycles, suitable for data-intensive applications with frequent writes.
● Wide range of application scenarios: suitable for the needs of multiple fields such as consumer electronics, automotive electronics, and industrial automation.
● 3D NAND technology: improves storage density, reduces power consumption, and increases the stability and reliability of storage products.
FAQ
Q1: What is the maximum read and write speed of MT29F2G16ABAEAWP-AIT:E?
A1: MT29F2G16ABAEAWP-AIT:E supports read and write speeds up to 400 MB/s, which can meet application scenarios that require high-speed storage, such as smartphones, in-vehicle equipment, etc. This high read and write speed enables it to provide excellent responsiveness when processing large amounts of data, and is suitable for data-intensive tasks and scenarios requiring high-speed access. In addition, with its excellent performance, MT29F2G16ABAEAWP-AIT:E can effectively shorten data processing time and improve overall system efficiency.
Q2: Is MT29F2G16ABAEAWP-AIT:E suitable for use in harsh environments?
A2: Yes, the MT29F2G16ABAEAWP-AIT:E supports an operating temperature range of -40°C to +85°C, and can operate stably in harsh environments such as industrial control and automotive electronics. Its wide operating temperature range enables it to maintain good performance in high or low temperature environments, avoiding storage instability caused by temperature fluctuations. In addition, the use of 3D NAND technology also makes it more reliable under extreme conditions, making it suitable for use in environments that require long-term stable operation.
For more information or to get a quote, please visit the following links:
Product Details: Win Source – MT29F2G16ABAEAWP-AIT:E
Request Quote: Win Source – RFQ for MT29F2G16ABAEAWP-AIT:E
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