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  • RFPA0133TR7 RF Power Amplifier for ISM and Industrial Wireless Systems

    1. Product Overview

    The RFPA0133TR7 is a high-efficiency, programmable-gain RF power amplifier based on GaAs HBT technology, developed by RF Micro Devices (now part of Qorvo). It supports a supply voltage range of 3V to 5V and operates across a wide frequency band from 380 MHz to 960 MHz, with typical applications concentrated in ISM and industrial wireless bands such as 400 MHz, 868 MHz, and 915 MHz. Common use cases include industrial remote control, 900 MHz ISM communications, and analog wireless systems. With excellent small-signal gain, saturated efficiency, and flexible output control, this device is well-suited for use as a driver or main PA in mid-power RF chains.

    2.  Key Specifications

    Parameter

    Typical Value (Unit)

    Description

    Operating Frequency

    380 – 960 MHz

    Supports ISM/industrial bands (400/868/915 MHz)

    Max Output Power

    30 dBm

    Tested under CW conditions at VCC = 5V

    Small-Signal Gain

    32 dB

    Measured at 900 MHz

    Saturated Efficiency

    >60%

    Typical, PIN = 0 dBm, VCC = 5V

    Supply Voltage Range

    3.0 – 5.0 V

    5V recommended for full output

    Max Supply Current

    230 mA

    G16/G8 set to High

    Idle Current

    75 mA

    No RF input applied

    Operating Temperature

    –40°C to +85°C

    Industrial-grade specification

    Package

    QFN 3×3 mm (16-lead)

    Exposed pad, JEDEC-compliant reflow compatible

    3.  Operating Principles and Performance Advantages

    The RFPA0133TR7 integrates a three-stage amplifier architecture and supports four programmable output levels via digital control inputs G16 and G8, offering typical output powers of approximately 5, 16, 23, and 30 dBm. Its collector output topology provides high power density and effective thermal performance for compact wireless modules.

    Key Advantages:

    • High Efficiency:>60% PAE at full output, ideal for power-sensitive designs
    • Digital Output Control: Supports 8 dB and 16 dB gain steps via G16/G8 logic
    • Wideband Operation: Covers 400–900 MHz for common ISM and industrial use
    • High Integration: Internal bias control and compact footprint ease board design
    • Thermal Robustness: Junction-to-board thermal resistance as low as 60 °C/W under typical load

    4.  Design and Debugging Guide

    To ensure stable and efficient performance, the following best practices are recommended:

    Power and Control:

    • Use a regulated 5V supply; keep VPD, VBIAS, G16, and G8 control inputs ≤3.3V (recommended 3.0V)
    • Apply local high-frequency bypass capacitors (e.g., 100 pF) on all control lines to suppress digital noise coupling

    RF Matching and Layout:

    • The final stage collector output is unmatched; external matching to 50Ω is required
    • Qorvo provides typical matching networks in evaluation board schematics
    • Maintain short, symmetrical RF traces and isolate from digital noise sources

    Thermal Management:

    • The QFN exposed pad must be soldered to a large ground plane
    • Use thermal vias under the pad to enhance heat dissipation in high-power designs
    • Ensure wide, low-impedance copper routing for supply paths

    Common Issues and Troubleshooting:

    Symptom

    Possible Cause

    Recommended Action

    No output / low power

    Improper logic level on G16/G8

    Ensure logic ≥1.7V and good ground connection

    Excessive current draw

    Mismatched load or overvoltage

    Verify impedance match and keep VCC ≤5.25V

    High harmonic emissions

    Inadequate filtering in output network

    Add LC trap or ceramic low-pass filter

    Overheating

    Poor thermal grounding or layout

    Improve pad soldering, use vias and copper fill

    5.  Related Product Comparison

    To support multi-band systems or expand design flexibility, the following Qorvo products share similar packages and power classes:

    Part Number

    Frequency Range

    Package

    Target Application

    RFPA0133TR7

    860–930 MHz

    QFN 3×3 mm

    ISM modules, industrial control, RFID

    RFPA5522TR13

    824–849 MHz

    QFN 3×3 mm

    LTE/CDMA Band 5 uplink PA

    TQP9309

    700–1000 MHz

    QFN 3×3 mm

    WCDMA/LTE mid-band driver or PA

    All devices above share package compatibility for modular RF front-end design.

    6.  Packaging and Reference Resources

    The RFPA0133TR7 is offered in a 3×3 mm QFN package with 16 leads and an exposed thermal pad, compliant with JEDEC standard reflow soldering processes. RFMD (now Qorvo) provides complete evaluation boards for both 430 MHz and 860–930 MHz bands, along with reference schematics and thermal characterization data. WIN SOURCE offers in-stock availability of this device, along with packaging documentation and verified symbol/footprint libraries to support rapid design integration.

    Designed for 380–960 MHz communication systems, this high-efficiency, digitally controlled RF power amplifier is particularly well-suited for ISM and industrial wireless applications. With high power density, flexible supply voltage, and robust thermal performance, the RFPA0133TR7 offers an ideal solution for compact wireless modules requiring mid-power amplification.

    To explore more component specifications, packaging models, and inventory availability, please visit the official WIN SOURCE website.

    © 2025 Win Source Electronics. All rights reserved. This content is protected by copyright and may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of Win Source Electronics.

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