Overview
The SI2308BDS-T1-GE3 is a single-channel N-channel power MOSFET from Vishay Intertechnology’s Vishay Siliconix series. It utilizes TrenchFET® technology and is designed for battery switching, DC/DC conversion, and other low-voltage power supply control applications. The device features… With a 60V drain-source voltage rating and low on-resistance under 4.5V and 10V gate drive conditions, it is suitable for power path control circuits that require a small package size and low conduction losses.
This device uses an SOT-23-3/TO-236 package and is a surface-mount device. For space-constrained power management, load switching, and portable electronic devices, the SOT-23 package can reduce PCB footprint and facilitate automated placement.
Core parameters
| Parameter | SI2308BDS-T1-GE3 |
| Device type | N-channel MOSFET |
| technology | TrenchFET® |
| Drain-source voltage VDS | 60 V |
| Continuous drain current ID | 2.3 A (TC = 25°C) |
| Maximum value of RDS(on) when VGS = 10V | 156 mΩ |
| Maximum value of RDS(on) when VGS = 4.5V | 192 mΩ |
| Typical gate charge Qg | 2.3 nC |
| Gate-source voltage VGS | ±20 V |
| Pulse drain current IDM | 8 A |
| Operating/Storage Junction Temperature Range | -55°C to +150°C |
| Maximum power consumption | 1.09 W (TA = 25°C); 1.66 W (TC = 25°C) |
| Packaging | SOT-23-3 / TO-236 |
| Installation method | Surface Mount |
| Configuration | Single |
| Typical applications | Battery Switch, DC/DC Converter |
| Environmental characteristics | Pb-free, RoHS-compliant, and Halogen-free versions are available. |
The above parameters are mainly based on the Vishay Si2308BDS datasheet; specific designs should be based on the corresponding batch and the official datasheet.
Features
60V drain-source voltage capability
The SI2308BDS has a VDS rating of 60V, providing a certain voltage margin for low-voltage power supply control and load switching circuits. For systems with nominal voltages below 48V, its suitability can be evaluated based on actual surge, voltage spike, and MOSFET SOA conditions.
Low on-resistance can be achieved under a 4.5V gate drive condition.
The device is The maximum RDS(on) at VGS = 4.5V is 192mΩ, which further decreases to 156mΩ at VGS = 10V .
Therefore, it can be used not only for traditional 10V gate drives, but also for power supply paths that are partially driven directly by low-voltage control circuits. In practical applications, verification should still be performed based on gate drive capability, temperature rise, load current, and the actual RDS(on) curve of the MOSFET.
TrenchFET® Structure
The SI2308BDS utilizes Vishay TrenchFET® power MOSFET technology. The trench MOSFET structure is primarily used to achieve low on-resistance within a limited chip area, making the device suitable for power switching and load control applications.
SOT-23 small package
The SI2308BDS-T1-GE3 is packaged in an SOT-23-3 package, with three pins corresponding to Gate, Source, and Drain. This package is suitable for space-constrained PCB designs and standard SMT manufacturing processes.
Typical application scenarios
Battery switch
Official applications of the SI2308BDS include battery switches. Utilizing the low on-resistance characteristics of N-channel MOSFETs, it can be used for power path control, load disconnection, and some protection circuits in battery-powered systems.
DC/DC converter
This device can also be used in DC/DC converters. In synchronous or asynchronous power supply topologies, its suitability as a power switching device can be evaluated based on the controller’s drive voltage, switching frequency, and load current.
Low voltage load switch
It has a defined RDS(on) parameter under 4.5V gate drive conditions, so it can be used in some low-voltage load control circuits, such as power switching of peripheral modules and power path control of embedded devices.
Power path control
In scenarios where it is necessary to isolate or switch the load from the system power supply, the low on-state impedance and turn-off characteristics of MOSFETs can be used to realize electronic power switching.
Comparative Advantage Analysis
| Design Dimensions | SI2308BDS-T1-GE3 Features | Impact on system design |
| voltage level | 60V VDS | Suitable for low voltage power supply systems |
| Driving conditions | Both 4.5V and 10V are available in RDS(on) specification. | It can be adapted to a variety of gate drive schemes |
| Conduction loss | 156mΩ @ 10V | It helps reduce power consumption in the on-state. |
| Gate charge | Typical 2.3nC | Suitable for designs with strict requirements on power consumption of switch drive. |
| Packaging | SOT-23-3 | PCB occupies a smaller area |
| Current capability | 2.3A @ TC=25°C | Suitable for control of medium and low power loads |
| Temperature range | -55°C to +150°C | Covers a wide junction temperature range |
| technology | TrenchFET® | For power switching applications |
Manufacturer Profile
Vishay Siliconix is a power semiconductor brand under Vishay Intertechnology, offering products including MOSFETs, power devices, and related discrete semiconductors. The SI2308BDS belongs to Vishay’s TrenchFET® product family, primarily targeting power management and power switching applications. According to Vishay’s official documentation, the Si2308BDS features TrenchFET® technology and is available in halogen-free, lead-free, and RoHS-compliant versions.
Why choose SI2308BDS-T1-GE3?
For devices already designed with the SI2308BDS-T1-GE3, the device’s 60V VDS, SOT-23-3 package, and RDS(on) parameters under 4.5V/10V gate drive conditions are key metrics to focus on when performing replacement and compatibility assessments.
However, this specific order model is currently marked as Obsolete by major distribution channels . Therefore, for maintenance projects, it is important to verify existing inventory, batches, and long-term supply conditions; for new designs, it is recommended to evaluate Vishay’s recommended SI2308CDS-T1-GE3 and other candidate devices, comparing VDS, RDS(on), Qg, package, pin definitions, and thermal performance item by item, rather than simply replacing them based on the model name.
Frequently Asked Questions (FAQ)
Q1: What type of device is SI2308BDS-T1-GE3?
It is a single-channel N-channel power MOSFET using TrenchFET® technology, with a rated drain-source voltage of 60V, primarily used for battery switching, DC/DC conversion, and power path control.
Q2: What is the maximum drain current of SI2308BDS-T1-GE3?
The Vishay datasheet gives a continuous drain current of 2.3A (TC = 25°C) . However, the continuous current rating will vary depending on the specific PCB conditions and TA = 25°C. Therefore, actual design requires calculations considering thermal resistance and PCB heat dissipation conditions.
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