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    FQD13N06LTM device package

    FQD13N06LTM schematic symbol

    The electronics revolution started in the true sense with the invention of the transistor. Further advancements in the transistor technology gave birth to the integrated circuits. These transistors and ICs form the backbone of virtually every electronic system present in the world today. With the passage of time many different types of transistors came into existence such as BJTs and MOSFETs. One major field of engineering which sprung out of semiconductors is the power electronics. Power MOSFETs are used as high frequency switches in power electronic converters and inverters. MOSFET stands for metal oxide semiconductor field effect transistor. Power MOSFETs can handle high voltages at high switching speeds. Power MOSFETs are the most widely used semiconductor switches in the world and are widely used in inverters, rectifiers, motor drives and DC choppers. As opposed to BJTs, MOSFETs are voltage controlled devices.

    What is FQD13N06LTM?

    The FQD13N06LTM is an N-channel enhancement mode power MOSFET developed by ON Semiconductor. This MOSFET is produced using the advanced planar stripe and DMOS technology. The use of these advanced technologies result in reduced on-state resistance, superior switching performance, and high avalanche energy strength. These devices are suitable for applications like DC motor control, audio amplifiers, switch mode power supplies, variable switching power circuits.

    Pin Configuration

    The pin configuration of the FQD13N06LTM power MOSFET is given in the table below:

    Pin Number Pin name Pin description
    1 Gate Gate for control of the device.
    2 Source Source terminal of the MOSFET
    3 Drain Drain terminal of the MOSFET


    • 11A, 60V rating
    • 115mOhm max resistance
    • Low gate charge
    • Low Crss
    • 100% avalanche tested
    • Supports direct operation from logic drivers
    • Fast switching


    The applications of FQD13N06LTM power MOSFET are provided as following:

    • DC motor controllers
    • Audio amplifiers
    • DC-DC choppers
    • Switch mode power supplies
    • Power electronic converters


    The major technical specifications of the FQD13N06LTM power MOSFET are provided as following:

    • Current rating: 11A
    • Voltage rating: 60V
    • On-state resistance: 115mOhm
    • Gate-source voltage: 10V
    • Drain current: 5.5A

    How FQD13N06LTM work?

    The FQD13N06LTM is an N-channel enhancement mode power MOSFET from ON Semiconductor. This device has a rated voltage of 60Vdc and can provide high frequency switching operation with high efficiency. The maximum drain current is 11A. These power MOSFETs are widely used in power electronic converters, audio amplifiers, power supplies, and DC motor controllers.

    An application circuit consisting of FQD13N06LTM power MOSFET based motor controller is shown in the figure below:

    FQD13N06LTM application circuit

    FQD13N06LTM Related Products Prices

    PartsMfr.DescriptionStockPricesBuy Now
    FQD13N06LTMON SemiconductorMOSFET N-CH 60V 11A DPAK3002$0.372 Lowest
    ON Semiconductor
    7099$0.321 Lowest
    ON SemiconductorMOSFET N-CH 100V 10A DPAK8318RFQ



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