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    Overview

    IPT007N06N is a high-efficiency N-channel power MOSFET launched by Infineon Technologies, designed for high current and high efficiency applications. With its excellent on-resistance (RDS(on)) and fast switching characteristics, IPT007N06N is an ideal choice for power management, automotive electronics and industrial control.

    Specification

    Maximum drain-source voltage (Vds)60V
    On-resistance (RDS(on))0.75mΩ
    Maximum continuous drain current (Id)120A
    Gate charge (Qg)138nC
    Package TypeTO-220

     

    Outstanding features of IPT007N06N

    IPT007N06N integrates a number of advanced power electronics technologies, and excels in demanding applications with its superior performance and reliability:

    • Ultra-low on-resistance : The on-resistance of only 0.75mΩ ensures the lowest power loss, making it the first choice for efficient power management and switching applications.
    • High current handling capability : Supports up to 120A of continuous drain current, can easily handle high power requirements, and is suitable for driving high current loads.
    • Fast switching performance : The IPT007N06N features extremely low gate charge (Qg), significantly reducing switching losses and improving the overall system efficiency.
    • High reliability package : TO-220 package is used, which provides excellent heat dissipation performance and mechanical stability, suitable for harsh working environment.

    Application Areas

    With its excellent on-resistance and high current handling capability, IPT007N06N is widely used in the following fields:

    • Power management systems : In high-efficiency switching power supplies and DC-DC converters, the low on-resistance of the IPT007N06N ensures minimal power loss and improves conversion efficiency.
    • Automotive electronics : Widely used in high-current demand components such as electric power steering, starters and electric pumps in automobiles to improve the energy efficiency and reliability of the overall system.
    • Industrial control : In industrial automation equipment, it is used to control high current loads to ensure stable system operation and reduce heat loss.

    Comparative Analysis: IPT007N06N and Other Power MOSFETs

    When choosing a power MOSFET, the IPT007N06N is known for its low on-resistance and high current handling capability. Compared to other power MOSFETs on the market, the IPT007N06N provides higher efficiency, lower heat loss, and greater current handling capability.

    Features/SpecificationsIPT007N06NOther Power MOSFETs
    Maximum drain-source voltage (Vds)60V40V to 80V
    On-resistance (RDS(on))0.75mΩ1mΩ to 2mΩ
    Maximum continuous drain current (Id)120A50A to 100A
    Package TypeTO-220SOP-8, TO-247

    Infineon Technologies: A global leader in power semiconductors

    As a world-leading supplier of power semiconductors, Infineon Technologies has been committed to providing customers with efficient and reliable solutions through innovative technologies. IPT007N06N is a strong proof of Infineon’s innovative ability in the field of power management, and its excellent performance has won wide recognition in the global market.

    Why choose IPT007N06N?

    With its excellent performance, low on-resistance and high current handling capability, IPT007N06N is an ideal choice for efficient power management and high current control applications. Whether in automotive electronics, industrial control or power management systems, IPT007N06N can provide stable and efficient power management to ensure reliable operation of the equipment.

    FAQ

    Q 1 : How does IPT007N06N maintain stable performance in high temperature environments?
    IPT007N06N uses TO-220 package, which has excellent heat dissipation performance and can maintain stable working state in high temperature environments. In addition, Infineon’s advanced manufacturing process also ensures its reliability in harsh environments.

    Q 2 : How does the on-resistance of the IPT007N06N affect power loss?
    The IPT007N06N has an ultra-low on-resistance of only 0.75mΩ, which significantly reduces power loss, especially in high current applications, helping to improve overall system efficiency.

    For more details and to explore our inventory, please visit the links below:

    Product Details: Win Source – IPT007N06N
    Price: Win Source – RFQ for IPT007N06N

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