1. GATE 2. DRAIN 3. SOURCE |
WHAT IS STW20NK50Z?
This STW20NK50Z device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology. In addition to a significant reduction in on state resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Low on state resistance makes it suitable for power electronics converters utilized in power conversion & control. High dv/dt capability makes it superior in high voltage applications like photovoltaic power generations and VFDs.
PIN CONFIGURATION
Table 1
PIN NUMBER | PIN NAME | DESCRIPTION |
1 | Gate | Controls the biasing of the MOSFET |
2 | Drain | Current flows in through Drain |
3 | Source | Current flows out through Source |
FEATURES
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
ALTERNATIVES FOR STW20NK50Z
Table 2
TRANSISTOR TYPE | ON_MAX | |||
STW20NK50Z | 500 V | 0.27 Ω | 20 A | 190 W |
STW32N55M5 | 550 V | 0.1 Ω | 29 A | 190 W |
STW32NM50N | 500 V | 0.13 Ω | 22 A | 190 W |
STW33N60M2 | 600 V | 0.125 Ω | 26 A | 190 W |
STW34NM60N | 600 V | 0.105 Ω | 31.5 A | 250 W |
APPLICATION
- High Current, High Speed Switching
- Ideal for Off-Line Power Supplies, Adaptors And PFC
WHERE TO USE STW20NK50Z? | WORKING OF STW20NK50Z
Major load of industrial sectors are VFDs. Efficiency of VFDs depends on the converters used to drive the motors. Low on state resistance of STW20NK50Z reduce conduction losses and makes VFDs efficient. So low on state resistance along with high dv/dt in STW20NK50Z makes it perfect choice for VFDs.
PACKAGE MECHANICAL DATA
Table 3
Dim. | mm | ||
Min. | Typ. | Max. | |
A | 4.85 | 5.15 | |
A1 | 2.20 | 2.60 | |
b | 1.0 | 1.40 | |
b1 | 2.0 | 2.40 | |
b2 | 3.0 | 3.40 | |
c | 0.40 | 0.80 | |
D | 19.85 | 20.15 | |
E | 15.45 | 15.75 | |
e | 5.45 | ||
L | 14.20 | 14.80 | |
L1 | 3.70 | 4.30 | |
L2 | 18.50 | ||
P | 3.55 | 3.65 | |
R | 4.50 | 5.50 | |
S | 5.50 |
HOW TO USE STW20NK50Z
STW20NK50Z MOSFET can be use in any power electronics circuit like inverter, DC-DC converter or controlled rectifier. As mentioned previously STW20NK50Z has three terminals Gate(G), Drain(D) and Source(S). Drain and Source are called power terminals whereas Gate terminal is known as control terminal. As shown in fig. gate pulses need to be provided between Gate and Source to turn on the MOSFET. Maximum current carrying capacity of STW20NK50Z is 20A hence, one can utilize this MOSFET in an application which require current flow of lesser than 20A.
To use STW20NK50Z in DC/DC Converters or Multilevel Inverters, driver ICs like TLP250 or IR2101 are required. Circuit diagram of STW20NK50Z along with driver TLP250 is shown in Fig.6. MOSFET Drivers are used to fulfill two objectives 1) to provide isolation (to control circuit from power circuit). 2) to amplification (5V pulse/3.3 V pulse from controller amplifies to >10V to effectively drive MOSFET). As shown in fig.6 TLP250 has inbuilt optocoupler along with two transistor amplification circuit. Pin configuration and appropriate connections are summarized in Table.4.
Table 4 Connection of TLP250 with STW20NK50Z
Pin Number | Pin Name | Connection | Description |
2 | Anode | To the output pin of controller | Input pulse of 3.3 V/5V to the driver circuit |
3 | Cathode | To the ground of controller | Ground of input side circuit |
8 | To the isolated supply with output voltage >10 V | Supply for driver circuit | |
5 | GND | To the GND of isolated supply | Ground of external driver supply |
6,7 | OUTPUT | To the Gate of STW20NK50Z. (Resistor is connected to limit the gate current) | 6 and 7 pins are internally shorted and provide amplified pulse provided at pin 2. |
STW20NK50Z RELATED PRODUCTS PRICE
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