SUM65N20-30-E3

Core parameters

Features

High voltage and high current handling capabilities

The SUM65N20-30-E3 has a 200V drain-source voltage rating and a continuous drain current of up to 65A at a case temperature of 25°C and 37A at a case temperature of 125°C. This device is suitable for power switching circuits requiring high voltage withstand and current handling capabilities and can be used in the power control stage of isolated DC/DC converters.

TrenchFET® technology

This device employs Vishay TrenchFET® power MOSFET technology, optimizing the conduction characteristics of power devices through a trench structure. Its maximum on-resistance is 30mΩ (VGS = 10V, ID = 30A), which helps reduce resistive losses during MOSFET conduction. Actual losses need to be calculated in conjunction with operating current, junction temperature, and gate drive voltage.

Lower conduction loss

The SUM65N20-30-E3 features a low on-resistance at 10V gate drive, typically 23mΩ, with a maximum of 30mΩ. This low RDS(on) helps reduce energy loss during power switch conduction, making it suitable for power conversion circuits with efficiency and thermal management requirements. Note that the on-resistance increases with junction temperature.

Optimized gate charge characteristics

The typical total gate charge of this device is 90nC, with a maximum of 130nC (VDS = 100V, VGS = 10V, ID = 85A test conditions). Gate charge is an important parameter for evaluating MOSFET drive requirements and switching losses. Appropriate selection of the gate driver and drive resistor helps control switching speed and electromagnetic interference.

High-Temperature Operation Capability and Thermal Management Design

The SUM65N20-30-E3 has a maximum operating junction temperature of 175°C and a typical junction-to-case thermal resistance of 0.4°C/W. The D2PAK package offers low thermal resistance, and heat conduction can be improved through PCB copper foil area, heat dissipation structure, and proper mounting design, making it suitable for electronic devices requiring high power density and efficient heat dissipation.

Typical application scenarios

Isolated DC/DC converter

These are the main applications explicitly listed in Vishay’s official datasheet. The SUM65N20-30-E3 can be used in power switching circuits of isolated DC/DC converters, participating in the power conversion process. Its 200V drain-source voltage and high current carrying capacity are suitable for switching power supply designs of corresponding voltage levels.

Industrial switching power supply

In industrial power systems, this device can be used in power switching stages to achieve current control during power conversion. The low on-resistance helps reduce conduction losses, while the D2PAK package facilitates PCB mounting and thermal design.

Power management and power conversion circuits

Suitable for power management circuits requiring N-channel MOSFETs for switching control, it can be used for power regulation and switching control depending on the circuit topology. Selection requires consideration of operating voltage, current, switching frequency, and gate drive conditions during design.

Industrial control equipment

It can be used as an auxiliary power supply and power conversion module in industrial control equipment to provide switching control functions for related circuits. Practical applications require ensuring that the device’s voltage, current, and thermal design parameters meet system requirements.

Battery-powered and energy conversion systems

In energy conversion circuits that meet their voltage and current ratings, the N-channel MOSFET characteristics can be used to achieve power switching control. For battery-related applications, transient voltage, overcurrent protection, and the device’s safe operating area should be carefully evaluated.

Performance Comparison

The following comparison between SUM65N20-30-E3 and its basic model SUM65N20-30 mainly illustrates the relationship between the complete order model and the basic device model.

From an electrical performance perspective, the SUM65N20-30-E3 corresponds to the same device specifications as the SUM65N20-30. E3 is a lead-free version designation in the ordering information, not a MOSFET with different electrical performance. During procurement, inventory management, and production replacement, the complete model number, package, terminal plating, and environmental requirements should be verified simultaneously to avoid making judgments based solely on the basic model number.

Manufacturer Profile: Vishay Intertechnology, Inc.

Vishay Intertechnology is one of the world’s leading manufacturers of electronic components, with products including MOSFETs, diodes, rectifiers, optoelectronic devices, resistors and capacitors, which are widely used in industrial, automotive, communications, computer and consumer electronics fields.

Vishay Siliconix is its power semiconductor product brand, focusing on the development and manufacturing of power devices such as MOSFETs. The TrenchFET® series offers a variety of voltage and current ratings for power management, switching power supplies, and power conversion equipment through different trench semiconductor technologies.

Why choose SUM65N20-30-E3?

• 200V Drain-Source Voltage: Suitable for power switching circuits that meet the rated voltage requirements.
• 65A continuous drain current: It has a high current carrying capacity under specified case temperature conditions.
• Low on-resistance: Maximum RDS(on) is 30mΩ (VGS = 10V).
• TrenchFET® technology: Employs a trench MOSFET structure to optimize device conduction characteristics.
• Optimized gate charge: Typical Qg is 90nC, which facilitates gate drive design.
• Maximum junction temperature of 175°C: Supports a wide range of device junction temperature operation.
• D2PAK package: Surface mount structure, which facilitates PCB integration and thermal management.
• Lead-free order version: Model E3 is suitable for procurement needs that meet the corresponding lead-free and environmental protection requirements.

Frequently Asked Questions (FAQ)

Q1: What type of electronic component is SUM65N20-30-E3?

The SUM65N20-30-E3 is an N-channel power MOSFET from Vishay Siliconix. It uses TrenchFET® technology, has a drain-source voltage of 200V, and a maximum continuous drain current of 65A. It is mainly used in isolated DC/DC converters and other power switching circuits that meet its rated parameters.

Q2: What is the maximum drain current of the SUM65N20-30-E3?

The device exhibits a maximum continuous drain current of 65A at a case temperature (TC) of 25°C and a maximum continuous drain current of 37A at a case temperature of 125°C. The highest pulsed drain current reaches 140A. Actual operating current requires evaluation considering heat dissipation conditions, duty cycle, and safe operating area.

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Product Details: Win Source – SUM65N20-30-E3

Price: Win Source – SUM65N20-30-E3