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    What is the sensitivity temperature drift?

    Sensitivity temperature drift is due to the change in piezoresistive coefficient with temperature. When the temperature increases, the piezoresistive coefficient decreases; when the temperature decreases, the piezoresistive coefficient increases, indicating that the sensitivity coefficient of the sensor is a negative value.

    The role and operation of the cycle control scheme?

    Loop control can counteract the effects of resonance by treating it as a disturbance within the system. The control scheme of a typical discrete loop controller is shown in the figure. where z-d is the discrete time delay for the dth sampling period; F(z) is a low-pass finite impulse response (FIR) filter with a blank period to reduce uncertain frequency gain. L(z) is the transfer function of the inner loop control loop, and Gx(z) is a linear filter to ensure system stability. Gc(z) is the main controller and G(z) is the controlled system.

    What is the purpose of the OC squat test for the pull-out test?

    Verify that the COS can successfully protect the data when the card is suddenly powered off while executing a command with a write operation.

    Briefly describe the FPGA technology of RRAM?

    Aiming at the volatile shortcomings of the SRAM architecture based on traditional FPGAs: if the SRAM is changed to a non-volatile SRAM, it can have the advantages of continuous high-speed data writing of SRAM; it can also ensure that data is not lost after power failure, and data security can be ensured. There have been reports on FPGAs programmed with NVSRAM, such as NVSRAM based on ferroelectric memory. Ferroelectric FPGAs have the advantages of low voltage, low power consumption, and no need for external non-volatile memory. However, due to the characteristics of ferroelectric materials, their manufacturing process is complicated. It is difficult to be compatible with the traditional CMOS process, resulting in the high cost of ferroelectric FPGA, which is not suitable for mass production and large-capacity storage. However, resistive-variable memory (RRAM) uses transition metal oxide as the storage medium. Because of its simple composition, good compatibility with CMOS standard process, high speed, low power consumption, low cost and other advantages. It brings dawn to the construction of low-cost, low-power, high-reliability non-volatile SRAM. The biggest feature of SRAM is its high speed (on the order of 10ns), but it also has inherent deficiencies. 6 transistors are required to form a basic unit. Its cell area is the largest of any memory. As an emerging non-volatile storage technology, RRAM has attracted worldwide attention due to its superior storage performance. According to the data reported so far, the erasing and writing speed of RRAM can reach the order of <10ns, which makes it technically possible to use RRAM to replace SRAM to build a high-performance FPGA with RRAM as the architecture. Generally, RRAM memory cells can be divided into two types: 1T1R structure and cross-array structure. The former only needs one transistor for strobe, which greatly reduces the area of ​​the memory cell compared to the 6 transistors of the SRAM, and the density can be increased by more than 3 times. The crossbar array structure can realize three-dimensional stacked switch matrix, which is promising to realize ultra-high-density FPGA. also. Due to the non-volatile nature of RRAM, power is not required to hold data, so its static power consumption is close to zero.

    What are the main aspects of the monitoring terminal?

    The monitoring terminal includes: main program module, network module, Qt graphic display module, database processing module and serial port module.

    Are there several types of point contact diodes classified by forward and reverse characteristics?

    • Point-contact diodes are mainly divided into the following types according to forward and reverse characteristics.
      1. General point-contact diodes.
      2. High reverse withstand voltage point contact diode.
      3. High reverse resistance point contact diode.
      4. High conduction point contact diode.

    What are the system software features?

    1. Query the current underground personnel distribution.
    2. Underground personnel tracking.
    3. Security function.
    4. Attendance management function.
    5. Production scheduling function.
    6. Network function.

    At present, what are the commonly used switching devices?

    At present, commonly used switching devices include gate turn-off thyristor (GTO), power transistor (GTR or BJT), power field effect transistor (P-MOSFET) and insulated gate bipolar transistor (IGBT).

    What are the disadvantages of the mobile phone power channel management solution?

    The disadvantage of these solutions is when the other end of the mobile phone connection cable is connected to the USB port of the computer. If the maximum current draw is always set to l00mA, the charging time of the battery will be extended several times. If the mobile phone is still working and continues to draw current, it is possible that the battery will never be fully charged. If the maximum current draw is set to 500mA from the beginning, it may cause the host to malfunction or the USB interface to burn.

    What is the characteristic parameter of an optoelectronic device?

    A photoelectric sensor is a device that uses the photoelectric effect of photosensitive materials to convert light radiation energy into corresponding electrical signals. The change of light radiation determines the change of electrical properties (size, speed) produced by optoelectronic devices. The magnitude relationship used to characterize these properties is called the characteristic parameter of the optoelectronic device.


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